Large-signal dynamics of resonant-tunneling diodes
نویسندگان
چکیده
A model for analyzing dynamic large-signal characteristics of double-barrier resonant-tunneling diodes (RTDs) is presented. The based on the analysis dynamical trajectories in phase space, defined by RTD bias and electron density quantum well. We show that an accurate can be reformulated approximate way, relying only a directly measurable DC I–V curve few other parameters, which could easily estimated with simple calculations. further demonstrate equivalent circuit, composed capacitor, inductor, two resistors (RLRC), accurately describes admittance RTDs. circuit elements described terms relaxation time, geometrical capacitance, low- high-frequency resistors. has very same structure as previously derived small-signal admittance, although deviating are now dependent AC-signal amplitude. time shorter longer than one. In context oscillators, allows one to get higher output power at high frequencies. availability accurate, general, but rather simple, physics-based dynamics removes major hindrances development sub-THz THz oscillators.
منابع مشابه
Simulation of Resonant Tunneling Diodes Using ATLAS
This article describes a model for Resonant Tunneling Diodes (RTDs) implemented within ATLAS framework. The model is based on a self-consistent solution of Poisson and Non-Equilibrium Green’s Function (NEGF) equations with an effective mass Hamiltonian. Simulation results are presented for generic GaAs and SiGe RTDs.
متن کاملFerromagnetic Resonant Tunneling Diodes: Physics and Applications
Dedication To my family. v Acknowledgements I would like to acknowledge, foremost, my advisor Prof. Sanjay Banerjee. I should thank him for providing me the opportunity to pursue graduate study, his constant support for the last six years – both intellectual and material, and the flexibility he afforded to me to define and follow my interests. Second, I would like to acknowledge my co-advisor P...
متن کاملElectron-photon interaction in resonant tunneling diodes
– We develop a model to describe the transmission coefficient and tunneling current in the presence of electron-photon coupling in a resonant diode. Our model takes into account multiphoton processes as well as the transitions between electronic states with different wave numbers. This is crucial to explain the experimental features observed in the tunneling current through a double barrier whi...
متن کاملResonant-tunneling diodes with emitter prewells
Related Articles Ultra-thin titanium oxide Appl. Phys. Lett. 101, 083113 (2012) Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices Appl. Phys. Lett. 101, 043508 (2012) Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes J. Appl. Phys. 111, 123115 (2012) Tuning of terahertz intrinsic oscillations in asymmetric triple-bar...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2023
ISSN: ['1089-7550', '0021-8979', '1520-8850']
DOI: https://doi.org/10.1063/5.0134223